Improvement of breakdown characteristics of a GaAs power...

Journal of Applied Physics 1993 Vol. 73; Iss. 7

Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH4)2Sx treatment

Lee, Jong-Lam, Kim, Dojin, Maeng, Sung Jae, Park, Hyung Ho, Kang, Jin Young, Lee, Yong Tak
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Volume:
73
Year:
1993
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.352931
File:
PDF, 671 KB
english, 1993
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