Quantifying ion-induced defects and Raman relaxation length...

Carbon 2010 Vol. 48; Iss. 5

Quantifying ion-induced defects and Raman relaxation length in graphene

M.M. Lucchese, F. Stavale, E.H. Martins Ferreira, C. Vilani, M.V.O. Moutinho, Rodrigo B. Capaz, C.A. Achete, A. Jorio
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Volume:
48
Year:
2010
Language:
english
Pages:
6
DOI:
10.1016/j.carbon.2009.12.057
File:
PDF, 1.03 MB
english, 2010
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