Advanced performance and scalability of Si nanowire...

Journal of Applied Physics 2013 Vol. 114; Iss. 20

Advanced performance and scalability of Si nanowire field-effect transistors analyzed using noise spectroscopy and gamma radiation techniques

Li, J., Vitusevich, S. A., Petrychuk, M. V., Pud, S., Offenhäusser, A., Danilchenko, B. A.
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Volume:
114
Year:
2013
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4833567
File:
PDF, 2.66 MB
english, 2013
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