Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy
Corfdir, P., Lefebvre, P., Levrat, J., Dussaigne, A., Ganière, J.-D., Martin, D, Ristić, J., Zhu, T., Grandjean, N., Deveaud-Plédran, B.Volume:
105
Year:
2009
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3075596
File:
PDF, 824 KB
english, 2009