[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Comprehensive analysis of Ion variation in metal gate FinFETs for 20nm and beyond
Matsukawa, Takashi, Liu, Yongxun, O'uchi, Shin-ichi, Endo, Kazuhiko, Tsukada, Junichi, Yamauchi, Hiromi, Ishikawa, Yuki, Ota, Hiroyuki, Migita, Shinji, Morita, Yukinori, Mizubayashi, Wataru, Sakamoto,Year:
2011
Language:
english
DOI:
10.1109/iedm.2011.6131598
File:
PDF, 1.67 MB
english, 2011