Current collapse induced in AlGaN/GaN...

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

Mittereder, J. A., Binari, S. C., Klein, P. B., Roussos, J. A., Katzer, D. S., Storm, D. F., Koleske, D. D., Wickenden, A. E., Henry, R. L.

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Volume:

Year:

2003

Language:

english

Journal:

Applied Physics Letters

DOI:

10.1063/1.1604472

File:

PDF, 235 KB

english, 2003

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