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Comparison of quantum well intermixing in GaAs structures using a low temperature grown epitaxial layer or a SiO[sub 2] cap
Lee, A. S. W., Hulko, O., Thompson, D. A., Robinson, B. J., Simmons, J. G.Volume:
100
Year:
2006
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2214360
File:
PDF, 600 KB
english, 2006