Relaxation of strained Si layers grown on SiGe buffers

Relaxation of strained Si layers grown on SiGe buffers

Samavedam, S. B., Taylor, W. J., Grant, J. M., Smith, J. A., Tobin, P. J., Dip, A., Phillips, A. M., Liu, R.
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Volume:
17
Year:
1999
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.590771
File:
PDF, 458 KB
english, 1999
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