Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
1999 Vol. 17; Iss. 4
Relaxation of strained Si layers grown on SiGe buffers
Samavedam, S. B., Taylor, W. J., Grant, J. M., Smith, J. A., Tobin, P. J., Dip, A., Phillips, A. M., Liu, R.Volume:
17
Year:
1999
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.590771
File:
PDF, 458 KB
english, 1999