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Temperature dependence of the threshold current density in InP-Ga0.28In0.72As0.6P0.4 (λ=1.3 μm) double heterostructure lasers
Casey, H. C.Volume:
56
Year:
1984
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.334226
File:
PDF, 813 KB
english, 1984