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[IEEE 2009 International Semiconductor Device Research Symposium (ISDRS 2009) - College Park, MD (2009.12.9-2009.12.11)] 2009 International Semiconductor Device Research Symposium - Effect of dopant profile on current-voltage characteristics of p+n+ In0.53Ga0.47As tunnel junctions
Kabeer, S., Vasen, T., Wheeler, D., Qin Zhang,, Koswatta, S., Haijun Zhu,, Clark, K., Jenn-Ming Kuo,, Yung-Chung Kao,, Corcoran, S., Doyle, B., Fay, P., Kosel, T., Huili Xing,, Seabaugh, A.Year:
2009
Language:
english
DOI:
10.1109/isdrs.2009.5378127
File:
PDF, 429 KB
english, 2009