[IEEE International Electron Devices Meeting 1991 [Technical Digest] - Washington, DC, USA (8-11 Dec. 1991)] International Electron Devices Meeting 1991 [Technical Digest] - Quantum-mechanical threshold voltage shifts of MOSFETs caused by high levels of channel doping
van Dort, M.J., Woerlee, P.H., Walker, A.J., Juffermans, C.A.H., Lifka, H.Year:
1991
Language:
english
DOI:
10.1109/iedm.1991.235348
File:
PDF, 260 KB
english, 1991