High-rate etching of GaAs using chlorine atmospheres doped...

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 1998 / 5 Vol. 16; Iss. 3

High-rate etching of GaAs using chlorine atmospheres doped with a Lewis acid

Franz, Gerhard
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Volume:
16
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.581184
Date:
May, 1998
File:
PDF, 611 KB
english, 1998
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