Low Schottky barrier height for ErSi[sub 2−x]/n-Si contacts...

Journal of Applied Physics 2008 Vol. 104; Iss. 10

Low Schottky barrier height for ErSi[sub 2−x]/n-Si contacts formed with a Ti cap

Reckinger, Nicolas, Tang, Xiaohui, Bayot, Vincent, Yarekha, Dmitri A., Dubois, Emmanuel, Godey, Sylvie, Wallart, Xavier, Larrieu, Guilhem, Łaszcz, Adam, Ratajczak, Jacek, Jacques, Pascal J., Raskin, J
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Volume:
104
Year:
2008
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3010305
File:
PDF, 1.45 MB
english, 2008
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