The effect of substrate bias on hot-carrier damage in NMOS devices
Doyle, B.S., Marchetaux, J., Bourcerie, M., Boudou, A.Volume:
10
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.31665
Date:
January, 1989
File:
PDF, 279 KB
english, 1989