Spatial characterization of doped SiC wafers by Raman...

Spatial characterization of doped SiC wafers by Raman spectroscopy

Burton, J. C., Sun, L., Pophristic, M., Lukacs, S. J., Long, F. H., Feng, Z. C., Ferguson, I. T.
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Volume:
84
Year:
1998
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.368947
File:
PDF, 404 KB
english, 1998
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