Spatial characterization of doped SiC wafers by Raman spectroscopy
Burton, J. C., Sun, L., Pophristic, M., Lukacs, S. J., Long, F. H., Feng, Z. C., Ferguson, I. T.Volume:
84
Year:
1998
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.368947
File:
PDF, 404 KB
english, 1998