Composition of Ge(Si) islands in the growth of Ge on Si(111) by x-ray spectromicroscopy
Ratto, Fulvio, Rosei, Federico, Locatelli, Andrea, Cherifi, Salia, Fontana, Stefano, Heun, Stefan, Szkutnik, Pierre-David, Sgarlata, Anna, De Crescenzi, Maurizio, Motta, NunzioVolume:
97
Year:
2005
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1832747
File:
PDF, 1.23 MB
english, 2005