Phase change random access memory featuring silicide metal...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2011 Vol. 29; Iss. 3

Phase change random access memory featuring silicide metal contact and high-κ interlayer for operation power reduction

Fang, Lina Wei-Wei, Zhao, Rong, Lim, Kian-Guan, Yang, Hongxin, Shi, Luping, Chong, Tow-Chong, Yeo, Yee-Chia
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Volume:
29
Year:
2011
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3584823
File:
PDF, 655 KB
english, 2011
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