Activated boron and its concentration profiles in heavily...

Journal of Applied Physics 2008 Vol. 104; Iss. 9

Activated boron and its concentration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements

Tsutsui, Kazuo, Matsuda, Toru, Watanabe, Masamitsu, Jin, Cheng-Guo, Sasaki, Yuichiro, Mizuno, Bunji, Ikenaga, Eiji, Kakushima, Kuniyuki, Ahmet, Parhat, Maruizumi, Takuya, Nohira, Hiroshi, Hattori, Tak
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Volume:
104
Year:
2008
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3014033
File:
PDF, 699 KB
english, 2008
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