Effects of postdeposition annealing ambient on hysteresis in an Al2O3/GeO2 gate-dielectric stack on Ge
Fukuda, Yukio, Otani, Yohei, Sato, Tetsuya, Toyota, Hiroshi, Ono, ToshiroVolume:
110
Year:
2011
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3610796
File:
PDF, 530 KB
english, 2011