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Tight-binding analysis of the electronic states in AlAs with N isoelectronic impurities
Jo, M., Mano, T., Sakuma, Y., Sakoda, K.Volume:
115
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4869261
Date:
March, 2014
File:
PDF, 651 KB
english, 2014