Effects of gate insulator using high pressure annealing on the characteristics of solid phase crystallized polycrystalline silicon thin-film transistors
Kim, Moojin, Jin, GuangHaiVolume:
105
Year:
2009
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3103335
File:
PDF, 641 KB
english, 2009