[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Development of SF6/O2/Si plasma etching topography simulation model using new flux estimation method
Ikeda, Tomoharu, Saito, Hirokazu, Kawai, Fumiaki, Hamada, Kimimori, Ohmine, Toshimitsu, Takada, Hideki, Deshpande, VaibhavYear:
2011
Language:
english
DOI:
10.1109/sispad.2011.6035063
File:
PDF, 1.60 MB
english, 2011