Implantation and transient B diffusion in Si: The source of...

Applied Physics Letters 1994 Vol. 65; Iss. 18

Implantation and transient B diffusion in Si: The source of the interstitials

Eaglesham, D. J., Stolk, P. A., Gossmann, H.-J., Poate, J. M.
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Volume:
65
Year:
1994
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.112725
File:
PDF, 636 KB
english, 1994
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