[IEEE 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Beijing, China (2008.10.20-2008.10.23)] 2008 9th International Conference on Solid-State and Integrated-Circuit Technology - Gradual Ge1−xSix/Si heteronanocrystals based non-volatile floating gate memory device with asymmetric tunnel barriers

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