Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2011 Vol. 29; Iss. 3
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Ultrahigh luminescence extraction via the monolithic integration of a light emitting active region with a semiconductor hemisphere
Wu, S.-N., Yu, S.-Q., Ding, D., Johnson, S. R., Zhang, Y.-H.Volume:
29
Year:
2011
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3592190
File:
PDF, 685 KB
english, 2011