High-performance Zn-doped-base InP/InGaAs...

Applied Physics Letters 1994 Vol. 64; Iss. 9

High-performance Zn-doped-base InP/InGaAs double-heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy

Kurishima, K., Nakajima, H., Yamahata, S., Kobayashi, T., Matsuoka, Y.
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Volume:
64
Year:
1994
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.110844
File:
PDF, 521 KB
english, 1994
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