Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
1995 / 3 Vol. 13; Iss. 2
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Carbon-doped InAlAs/InGaAs heterojunction bipolar transistors in solid-source molecular-beam epitaxy using carbon tetrabromide
Hwang, Wen-YenVolume:
13
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.587937
Date:
March, 1995
File:
PDF, 370 KB
english, 1995