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Influence of negatively and positively charged scattering centers on electron mobility in semiconductor inversion layers: A Monte Carlo study
Gámiz, F., López-Villanueva, J. A.Volume:
78
Year:
1995
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.360209
File:
PDF, 971 KB
english, 1995