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Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness
Pavunny, S. P., Misra, P., Thomas, R., Kumar, A., Schubert, J., Scott, J. F., Katiyar, R. S.Volume:
102
Year:
2013
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4805037
File:
PDF, 929 KB
english, 2013