Memory properties of a ferroelectric gate field-effect...

Journal of Applied Physics 2003 Vol. 94; Iss. 4

Memory properties of a ferroelectric gate field-effect transistor with an adjoining metal–ferroelectric–metal assistance cell

Xiong, Sibei, Sakai, Shigeki, Ishii, Kenichi, Migita, Shinji, Sakamaki, Kazuo, Ota, Hiroyuki, Suzuki, Eiichi
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Volume:
94
Year:
2003
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1592606
File:
PDF, 435 KB
english, 2003
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