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Erratum: ‘‘Inhomogeneous strain relaxation and defect distribution of ZnTe layers deposited on (110)GaAs by metalorganic vapor phase epitaxy’’ [J. Appl. Phys. 78, 229 (1995)]
Lovergine, N., Liaci, F., Ganière, J.-D., Leo, G., Drigo, A. V., Romanto, F., Mancini, A. M., Vasanelli, L.Volume:
79
Year:
1996
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.362719
File:
PDF, 265 KB
english, 1996