Improved high-temperature switching characteristics of Y...

physica status solidi (RRL) - Rapid Research Letters 2014 / 05 Vol. 8; Iss. 5

Improved high-temperature switching characteristics of Y 2 O 3 /TiO x resistive memory through carrier depletion effect

Zheng, Zhi-Wei, Hsu, Hsiao-Hsuan, Cheng, Chun-Hu, Chen, Po-Chun
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Volume:
8
Language:
english
Journal:
physica status solidi (RRL) - Rapid Research Letters
DOI:
10.1002/pssr.201409039
Date:
May, 2014
File:
PDF, 511 KB
english, 2014
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