Electrical Properties of HfTiON Gate-Dielectric GaAs...

IEEE Transactions on Electron Devices 2014 / 03 Vol. 61; Iss. 3

Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer

Wang, Li-Sheng, Liu, Lu, Xu, Jing-Ping, Zhu, Shu-Yan, Huang, Yuan, Lai, Pui-To
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Volume:
61
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2014.2297995
Date:
March, 2014
File:
PDF, 2.29 MB
english, 2014
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