Fast and slow carrier recombination transients in highly excited 4H– and 3C–SiC crystals at room temperature
Ščajev, P., Gudelis, V., Jarašiūnas, K., Klein, P. B.Volume:
108
Year:
2010
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3459894
File:
PDF, 1.24 MB
english, 2010