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Evidence for the influence of thermal spikes on ion induced mixing in Si at energies between 3 and 300 keV
Cardenas, J., Svensson, B. G., Petravic, M.Volume:
84
Year:
1998
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.368722
File:
PDF, 368 KB
english, 1998