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[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Conductive-bridge memory (CBRAM) with excellent high-temperature retention
Jameson, J. R., Blanchard, P., Cheng, C., Dinh, J., Gallo, A., Gopalakrishnan, V., Gopalan, C., Guichet, B., Hsu, S., Kamalanathan, D., Kim, D., Koushan, F., Kwan, M., Law, K., Lewis, D., Ma, Y., McCaYear:
2013
Language:
english
DOI:
10.1109/iedm.2013.6724721
File:
PDF, 597 KB
english, 2013