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Introduction of defect levels in resistive-evaporated n-Si Schottky barrier diodes
Ohta, E., Kakishita, K., Lee, H. Y., Sato, T., Sakata, M.Volume:
65
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.343357
File:
PDF, 576 KB
english, 1989