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Reactive ion etching of Si by Cl and Cl2 ions: Molecular dynamics simulations with comparisons to experiment
Hanson, D. E., Kress, J. D., Voter, A. F.Volume:
17
Year:
1999
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.581844
File:
PDF, 383 KB
english, 1999