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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - A Novel Electrode-Induced Strain Engineering for High Performance SOI FinFET utilizing Si (1hannel for Both N and PMOSFETs
Kang, C. Y., Choi, R., Song, S. C., Choi, K., Ju, B. S., Hussain, M. M., Lee, B. H., Bersuker, G., Young, C., Heh, D., Kirsch, P., Barnet, J., Yang, J-W., Xiong, W., Tseng, H-H, Jammy, R.Year:
2006
Language:
english
DOI:
10.1109/iedm.2006.346924
File:
PDF, 541 KB
english, 2006