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Effect of nitrogen incorporation on 1/f noise performance of metal-oxide-semiconductor field effect transistors with HfSiON dielectric
Shahriar Rahman, M., Morshed, Tanvir, Devireddy, S. P., Çelik-Butler, Zeynep, Quevedo-Lopez, M. A., Shanware, A., Colombo, L.Volume:
103
Year:
2008
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2837107
File:
PDF, 723 KB
english, 2008