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Hydrogen in undoped and heavily in situ phosphorus doped silicon films deposited using disilane and phosphine
Pejnefors, J., Zhang, S.-L., Grahn, J. V., Östling, M., Persson, L., Hult, M.Volume:
86
Year:
1999
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.370995
File:
PDF, 313 KB
english, 1999