A model determining optimal doping concentration and...

Applied Physics Letters 2012 Vol. 100; Iss. 19

A model determining optimal doping concentration and material’s band gap of tunnel field-effect transistors

Vandenberghe, William G., Verhulst, Anne S., Kao, Kuo-Hsing, Meyer, Kristin De, Sorée, Bart, Magnus, Wim, Groeseneken, Guido
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Volume:
100
Year:
2012
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4714544
File:
PDF, 721 KB
english, 2012
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