Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping,...

IEEE Transactions on Electron Devices 2015 / 1 Vol. 62; Iss. 1

Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content

Haehnel, Daniel, Fischer, Inga Anita, Hornung, Anja, Koellner, Ann-Christin, Schulze, Joerg
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Volume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2014.2371065
Date:
January, 2015
File:
PDF, 1.57 MB
english, 2015
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