Oxygen incorporation in homoepitaxial N-polar GaN grown by radio frequency-plasma assisted molecular beam epitaxy: Mitigation and modeling
Storm, D. F., Katzer, D. S., Meyer, D. J., Binari, S. C.Volume:
112
Year:
2012
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4732457
File:
PDF, 1.05 MB
english, 2012