[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - Fully depleted surrounding gate transistor (SGT) for 70 nm DRAM and beyond
Goebel, B., Lutzen, J., Manger, D., Moll, P., Mummler, K., Popp, M., Scheler, U., Schlosser, T., Seidl, H., Sesterhenn, M., Slesazeck, S., Tegen, S.Year:
2002
Language:
english
DOI:
10.1109/iedm.2002.1175831
File:
PDF, 264 KB
english, 2002