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[IRE 1984 International Electron Devices Meeting - ()] 1984 International Electron Devices Meeting - A highly reliable N-MOS process for one megabit dynamic random access memory

Matsukawa, T., Inuishi, M., Mitsuhashi, J., Hirayama, M., Tsukamoto, K., Uoya, S., Yoshihara, T., Nakata, H.
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Year:
1984
Language:
english
DOI:
10.1109/iedm.1984.190805
File:
PDF, 577 KB
english, 1984
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