Ion implantation and rapid thermal annealing of Mg, Cd, and...

Journal of Applied Physics 1988 Vol. 64; Iss. 4

Ion implantation and rapid thermal annealing of Mg, Cd, and Si in AlxGa1−xAs grown by molecular-beam epitaxy

Lam, Christine S., Fonstad, Clifton G.
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Volume:
64
Year:
1988
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.341719
File:
PDF, 645 KB
english, 1988
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