Selective silicon epitaxial growth at 800 °C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2
Yew, Tri-Rung, Reif, RafaelVolume:
65
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.342796
File:
PDF, 1.37 MB
english, 1989