Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2006 Vol. 24; Iss. 1
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Physical and electrical properties of Ta–N, Mo–N, and W–N electrodes on HfO[sub 2] high-k gate dielectric
Lu, Jiang, Kuo, Yue, Chatterjee, Somenath, Tewg, Jun-YenVolume:
24
Year:
2006
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.2163883
File:
PDF, 920 KB
english, 2006