Injection-level-dependent internal quantum efficiency and...

Injection-level-dependent internal quantum efficiency and lasing in low-defect GaN nanowires

Schlager, John B., Sanford, Norman A., Bertness, Kris A., Roshko, Alexana
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Volume:
109
Year:
2011
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3553418
File:
PDF, 1.68 MB
english, 2011
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